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December 2013
FDB390N15A
N-Channel PowerTrench ? MOSFET
150 V, 27 A, 39 m Ω
Features
? R DS(on) = 33.5 m Ω (Typ.) @ V GS = 10 V, I D = 27 A
? Fast Switching Speed
? Low Gate Charge, Q G = 14.3 nC (Typ.)
? High Performance Trench Technology for Extremely Low
R DS(on)
? High Power and Current Handling Capability
? RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor ’s advanced PowerTrench ? process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
? Consumer Appliances
? LED TV
? Synchronous Rectification
? Uninterruptible Power Supply
? Micro Solar Inverter
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C =
25 o C
unless otherwise noted.
Symbol
V DSS
Drain to Source Voltage
Parameter
FDB390N15A
150
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C,Silicon Limited)
- Continuous (T C = 100 o C,Silicon Limited)
±20
27
19
V
A
I DM
Drain Current
- Pulsed
(Note 1)
108
A
E AS
dv/dt
P D
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 3)
78
6.0
75
0.5
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds.
-55 to +175
300
o
o
C
C
Thermal Characteristics
Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max.
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
2
FDB390N15A
2.0
62.5
40
Unit
o C/W
?2011 Fairchild Semiconductor Corporation
FDB390N15A Rev. C1
1
www.fairchildsemi.com
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